Influence of Temperature on Modeling Silicon MOSFETs for RF and Wireless Applications

Author

Caverly, R.H. ; Reifsnyder, J.A.

Author_Institution

Villanova Univ., Villanova

fYear

2006

Firstpage

1

Lastpage

4

Abstract

MOS technology is becoming more widely used in RF and microwave designs. An important aspect of the design process is knowledge of the variation in MOSFET characteristics as functions of both frequency and temperature. This paper presents the results of an investigation of the temperature characteristics of MOSFET RF equivalent circuit parameters, focusing on the gate resistance and device transconductance. The study shows that the polysilicon gate resistance increases with temperature but at a different rate than an isolated polysilicon resistor. In addition, the transconductance was found to decrease with increasing temperature.

Keywords

MOSFET; elemental semiconductors; equivalent circuits; microwave devices; radiofrequency integrated circuits; silicon; MOSFET; RF applications; RF equivalent circuit; device transconductance; polysilicon gate resistance; wireless applications; Equivalent circuits; MOSFETs; Microwave devices; Microwave technology; Process design; Radio frequency; Resistors; Silicon; Temperature; Transconductance; MOSFETs; Microwave devices; Temperature; UHF FETs; UHF devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Sarnoff Symposium, 2006 IEEE

Conference_Location

Princeton, NJ

Print_ISBN

978-1-4244-0002-7

Type

conf

DOI

10.1109/SARNOF.2006.4534779

Filename

4534779