Title :
Polarization enhanced carrier transport in a p-down n-GaN/i-InGaN/p-GaN solar cell structure
Author :
Connelly, Blair C. ; Gallinat, Chad S. ; Woodward, Nathaniel T. ; Enck, Ryan W. ; Metcalfe, Grace D. ; Tompkins, Randy ; Zhou, Shuai ; Jones, Kenneth A. ; Shen, Paul H. ; Wraback, Michael
Author_Institution :
RDRL-SEE-M, U.S. Army Res. Lab., Adelphi, MD, USA
Abstract :
Evidence of a strong electric field aiding carrier collection is observed in an n-GaN/i-InGaN/p-GaN inverted polarity solar cell structure, detected by pump-probe electroabsorption and THz spectroscopy.
Keywords :
III-V semiconductors; electric field effects; electroabsorption; gallium compounds; indium compounds; optical pumping; solar cells; terahertz wave spectra; wide band gap semiconductors; GaN-InGaN-GaN; THz spectroscopy; carrier collection; inverted polarity solar cell structure; n-GaN/i-InGaN/p-GaN solar cell structure; p-down solar cell structure; polarization enhanced carrier transport; pump-probe electroabsorption; strong electric field; Electric fields; Gallium nitride; Laser excitation; Photonic band gap; Photonics; Photovoltaic cells; Probes;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
