• DocumentCode
    1649276
  • Title

    Large area InGaN/GaN nanowire solar cells on silicon

  • Author

    Nguyen, Hieu Pham Trung ; Li, Yukun ; Mi, Zetian

  • Author_Institution
    Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We have demonstrated, for the first time, large area InGaN/GaN nanowire solar cells on Si. An efficiency of ~0.19% is measured, which can be drastically improved by reducing the carrier localization and nonradiative surface recombination.
  • Keywords
    III-V semiconductors; elemental semiconductors; gallium compounds; indium compounds; nanophotonics; nanowires; optoelectronic devices; silicon; solar cells; wide band gap semiconductors; carrier localization; large area nanowire solar cells on silicon; nonradiative surface recombination; Current measurement; Gallium nitride; Nanoscale devices; Photovoltaic cells; Silicon; Substrates; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6325495
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1649276