Title :
New degradation mechanisms and reliability performance in tunneling field effect transistors
Author :
Jiao, G.F. ; Chen, Z.X. ; Yu, H.Y. ; Huang, X.Y. ; Huang, D.M. ; Singh, N. ; Lo, G.Q. ; Kwong, D.L. ; Li, Ming-Fu
Author_Institution :
Dept. Microelectron., Fudan Univ., Shanghai, China
Abstract :
Tunneling n-FET reliability performance is studied for the first time by physical analysis and experimental measurements. (1) A new degradation mechanism by interface trap induced change of tunneling field and current Id is demonstrated. (2) Under PBTI or HC stress, there is a strong peak of vertical electric field Ex at the gate/source overlapping region due to the P+ doping of the source, inducing high interface trap degradation. These explain the large PBTI and HC degradation, very different from those observed in conventional n-MOSFETs.
Keywords :
field effect transistors; interface states; internal stresses; nanowires; reliability; silicon; HC stress; PBTI; Si; degradation mechanisms; doping; gate-source overlapping region; interface trap; physical analysis; reliability performance; silicon nanowires; tunneling field; tunneling field effect transistors; Current measurement; Degradation; Doping; Electric variables measurement; FETs; MOSFET circuits; Performance analysis; Stress measurement; Time measurement; Tunneling;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424234
