Title :
Impact of interface states on MOS transistor mismatch
Author :
Andricciola, P. ; Tuinhout, H.P. ; De Vries, B. ; Wils, N.A.H. ; Scholten, A.J. ; Klaassen, D.B.M.
Author_Institution :
NXP Semicond., Eindhoven, Netherlands
Abstract :
Based on modified 2-D drift-diffusion device simulations, mismatch signatures and principal component analysis, this study proves that random interface states fluctuating in terms of density, position and energy levels, in addition to random dopant fluctuations are required for proper interpretation of drain current mismatch in contemporary CMOS technologies.
Keywords :
CMOS integrated circuits; MOSFET; principal component analysis; 2D drift-diffusion device simulation; CMOS technology; MOS transistor mismatch; density level; drain current mismatch; energy level; interface state; mismatch signature; position level; principal component analysis; random dopant fluctuation; Analytical models; CMOS technology; Current measurement; Doping; Fluctuations; Interface states; MOSFETs; Principal component analysis; Resource description framework; Semiconductor process modeling;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424239
