• DocumentCode
    1649670
  • Title

    Impact of interface states on MOS transistor mismatch

  • Author

    Andricciola, P. ; Tuinhout, H.P. ; De Vries, B. ; Wils, N.A.H. ; Scholten, A.J. ; Klaassen, D.B.M.

  • Author_Institution
    NXP Semicond., Eindhoven, Netherlands
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Based on modified 2-D drift-diffusion device simulations, mismatch signatures and principal component analysis, this study proves that random interface states fluctuating in terms of density, position and energy levels, in addition to random dopant fluctuations are required for proper interpretation of drain current mismatch in contemporary CMOS technologies.
  • Keywords
    CMOS integrated circuits; MOSFET; principal component analysis; 2D drift-diffusion device simulation; CMOS technology; MOS transistor mismatch; density level; drain current mismatch; energy level; interface state; mismatch signature; position level; principal component analysis; random dopant fluctuation; Analytical models; CMOS technology; Current measurement; Doping; Fluctuations; Interface states; MOSFETs; Principal component analysis; Resource description framework; Semiconductor process modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424239
  • Filename
    5424239
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1649670