Title :
Statistical model for MOSFET low-frequency noise under cyclo-stationary conditions
Author :
Wirth, Gilson ; Da Silva, Roberto ; Srinivasan, Purushothaman ; Krick, John ; Brederlow, Ralf
Author_Institution :
Electr. Eng., UFRGS, Porto Alegre, Brazil
Abstract :
A statistical model for the low-frequency (LF) noise behavior of MOSFETs under cyclo-stationary excitation is presented. The model is based on discrete device physics quantities, which are shown to cause statistical variability in LF noise behavior. Good agreement between experimental data, Monte Carlo simulations and model is demonstrated.
Keywords :
MOSFET; semiconductor device models; semiconductor device noise; statistics; MOSFET; Monte Carlo simulations; cyclostationary excitation; low-frequency noise; statistical model; Low-frequency noise; MOSFET circuits;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424240
