DocumentCode :
1649777
Title :
Wideband reflectors fashioned with freestanding HFO2 resonant gratings
Author :
Yin Xu ; Xumin Gao ; Dan Bai ; Xin Li ; Yongjin Wang
Author_Institution :
Grunberg Res. Centre, Nanjing Univ. of Posts & Telecommun., Nanjing, China
fYear :
2015
Firstpage :
1
Lastpage :
3
Abstract :
This paper proposes the design and fabrication of guided-mode resonant broadband reflectors operating in the visible band under TE polarization. The structure is composed of a freestanding subwavelength periodic HfO2 grating with an air cavity between the grating and the silicon substrate. The proposed wideband reflectors fashioned with freestanding HfO2 resonant gratings are implemented on an HfO2/AlN/Silicon platform by combining ion beam etching (IBE) of HfO2 film and wet etching of AlN. The optical responses of the designed freestanding HfO2 gratings are analyzed by the rigorous coupled-wave analysis(RCWA) method. More than 98% reflectance over an 50~52nm spectral range spanning 396~470nm was shown in the simulation of two reflectors with different parameters.
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; hafnium compounds; light polarisation; optical design techniques; optical fabrication; optical films; reflectivity; sputter etching; wide band gap semiconductors; HfO2 film; HfO2-AlN-Si; RCWA method; Si; TE polarization; freestanding HfO2 resonant grating; freestanding subwavelength periodic grating; guided-mode resonant broadband reflector design; guided-mode resonant broadband reflector fabrication; ion beam etching; rigorous coupled-wave analysis method; spectral range spanning; visible band; wet etching; wideband reflector; Aluminum nitride; Gratings; Hafnium compounds; III-V semiconductor materials; Optical device fabrication; Optical filters; Wideband; HfO2 grating; freestanding grating; guided-mode resonance; ion beam etching; wet etching; wideband reflector;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Communications and Networks (ICOCN), 2015 14th International Conference on
Conference_Location :
Nanjing
Type :
conf
DOI :
10.1109/ICOCN.2015.7203775
Filename :
7203775
Link To Document :
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