Widely tunable semiconductor laser based on step-chirped sampled Bragg grating

Author

Ting Chen ; Yajuan Qian ; Yuechun Shi ; Rulei Xiao ; Xiangfei Chen

Author_Institution

Nat. Lab. of Solid State Microstructures & Collaborative Innovation, Nanjing Univ., Nanjing, China

fYear

2015

Firstpage

1

Lastpage

3

Abstract

In this paper, a new kind of tunable distributed Bragg reflector (DBR) laser based on the step-chirped sampled Bragg grating (SBG), has been proposed and studied. Based on analysis and simulations, it has been shown that a comb-like reflectivity spectrum with flat envelop covering over 40 nm can be realized with the proposed structure. Static characteristics of the DBR laser, including the wavelength tuning range, output power, side-mode suppression ratio (SMSR), and L-I curves, are stimulated. The tuning range of 40 nm can be obtained and the laser threshold current is around 12 mA.

Keywords

Bragg gratings; distributed Bragg reflector lasers; laser tuning; reflectivity; semiconductor lasers; L-I curves; comb-like reflectivity spectrum; laser threshold current; output power; side-mode suppression ratio; static characteristics; step-chirped sampled Bragg grating; tunable distributed Bragg reflector laser; tuning range; wavelength tuning range; widely tunable semiconductor laser; Bragg gratings; Chirp; Distributed Bragg reflectors; Gratings; Optical fiber communication; Reflection; Tuning; DBR; Tunable laser; step-chirped Sampled grating; vernier effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communications and Networks (ICOCN), 2015 14th International Conference on

Conference_Location

Nanjing

Type

conf

DOI

10.1109/ICOCN.2015.7203777

Filename

7203777