High performance n-MOSFETs with novel source/drain on selectively grown Ge on Si for monolithic integration

We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) technique. Until now low source/drain series resistance in Ge n-MOSFETs has been a highly challenging problem. Source and drain are formed by implant-free, in-situ doping process for the purpose of very low series resistance and abrupt and shallow n⁺/p junctions. The novel n-MOSFETs show among the highest electron mobility reported on (100) Ge to-date. Furthermore, these devices provide an excellent I_on/I_off ratio(4×10³) with very high I_on of 3.23¿A/¿m. These results show promise towards monolithic integration of Ge MOSFETs with Si CMOS VLSI platform.