Author :
Bidal, G. ; Boeuf, F. ; Denorme, S. ; Laviron, C. ; Bourdelle, K. ; Loubet, N. ; Campidelli, Y. ; Beneyton, R. ; Moriceau, H. ; Fournel, F. ; Morin, P. ; Barnola, S. ; Salvetat, T. ; Perreau, P. ; Gouraud, P. ; Leverd, F. ; Le-Gratiet, B. ; Huguenin, J.L.
Abstract :
For the first time we demonstrate the CMOS integration of undoped fully-depleted Ultra Thin Body and BOX devices (UTB2) with (110)/(100) substrate crystal orientation for pFET and nFET respectively. For this, we used an original 3D-folded Bulk+/Silicon-On-Nothing (SON) process on DSB substrate. Resulting multi-surface orientations devices are studied.
Keywords :
CMOS integrated circuits; field effect transistors; wafer bonding; (100) substrate crystal orientation; (110) substrate crystal orientation; 3D-folded bulk process; BOX device; CMOS integration; bulk direct silicon bonded wafer; complementary metal-oxide-semiconductor; multisurface orientation devices; nFET; pFET; silicon-on-nothing process; ultra thin body; Annealing; Creep; Epitaxial growth; Etching; Germanium silicon alloys; Implants; Silicon germanium; Solids; Temperature; Wafer bonding;
