Title :
High performance GeO2/Ge nMOSFETs with source/drain junctions formed by gas phase doping
Author :
Morii, Kiyohito ; Iwasaki, Takashi ; Nakane, Ryosho ; Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution :
Univ. of Tokyo, Tokyo, Japan
Abstract :
We have revealed that the MOVPE-based gas phase doping (GPD) can yield lower arsenic diffusion constant and lower leakage current n+/p junctions in Ge compared to conventional ion implantation doping. Thus, the GPD is quite effective for realizing high performance Ge n-channel MOSFETs. By using the GPD for source/drain (S/D) junction formation, the GeO2/Ge nMOSFETs have achieved high electron mobility of 804 cm2/Vs with maintaining low junction leakage current of 10-3 A/cm2 and high Ion/Ioff ratio of 104.
Keywords :
MOCVD coatings; MOSFET; electron mobility; elemental semiconductors; germanium; semiconductor doping; GeO2-Ge; MOVPE based gas phase doping; electron mobility; n-channel MOSFET; source-drain junctions; CMOS technology; Diodes; Doping; Electron mobility; Hydrogen; Inductors; Ion implantation; Leakage current; MOSFETs; Temperature;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424248
