Title :
Trigate 6T SRAM scaling to 0.06 µm2
Author :
Guillorna, M. ; Chang, J. ; Pyzyna, A. ; Engelmann, S. ; Joseph, E. ; Fletcher, B. ; Cabral, C. ; Lin, C.H. ; Bryant, A. ; Darnon, M. ; Ott, J. ; Lavoie, C. ; Frank, M. ; Gignac, L. ; Newbury, J. ; Wang, C. ; Klaus, D. ; Kratschmer, E. ; Bucchignano, J. ;
Author_Institution :
IBM Res., IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
We present an aggressively scaled trigate device architecture with undoped channels, high-k gate dielectric, a single work function metal gate and novel BEOL processing yielding 6T SRAM bit cells as small as 0.06 μm2. This is the smallest SRAM cell demonstrated to date and represents the first time an SRAM based on a multi-gate FET (MUGFET) architecture has surpassed SRAM density scaling demonstrated with planar devices.
Keywords :
SRAM chips; field effect transistors; high-k dielectric thin films; BEOL processing; high-k gate dielectric; multigate FET architecture; planar devices; scaled trigate device architecture; single work function metal gate; trigate 6T SRAM scaling; Dielectric devices; Electrostatics; Implants; Optical films; Parasitic capacitance; Random access memory; Silicides; Silicon compounds; Tin; Wiring;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424249
