Title :
Hybrid FDSOI/bulk High-k/metal gate platform for low power (LP) multimedia technology
Author :
Fenouillet-Beranger, C. ; Perreau, P. ; Pham-Nguyen, L. ; Denorme, S. ; Andrieu, F. ; Tosti, L. ; Brevard, L. ; Weber, Olivier ; Barnola, S. ; Salvetat, T. ; Garros, Xavier ; Casse, M. ; Leroux, Camille ; Noel, J.P. ; Thomas, O. ; Le-Gratiet, B. ; Baron,
Author_Institution :
CEA-LETI, MINATEC, Grenoble, France
Abstract :
In this paper, we present FD-SOI with High-K and Single Metal gate as a possible candidate for LP multimedia technology. Dual gate oxide co-integrated devices with EOT 17 ¿/Vdd 1.1 V and 29 ¿/Vdd 1.8 V are reported. The interest of Ultra-Thin Buried Oxide substrates (UTBOX) is reported in term of Multiple Vt achievement and matching improvement. Delay improvement up to 15% is reported on Ring Oscillators as compared to bulk 45 nm devices. In addition, for the first time 99.998% 2 Mbit 0.374 ¿m2 SRAM cut functionality has been demonstrated. Thanks to a hybrid FDSOI/bulk co-integration with UTBOX all IP´s required in a SOC are demonstrated for LP applications.
Keywords :
low-power electronics; multimedia systems; silicon-on-insulator; system-on-chip; SOC; dual gate oxide co-integrated devices; hybrid FDSOI bulk high-k metal gate platform; low power multimedia technology; ultra-thin buried oxide substrates; Dielectric devices; Electrostatics; High K dielectric materials; High-K gate dielectrics; Implants; Optical films; Random access memory; Silicides; Silicon compounds; Tin;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424251
