• DocumentCode
    1650237
  • Title

    The impact of scaling on interconnect reliability

  • Author

    Bruynseraede, C. ; Tökei, Zs ; Iacopi, F. ; Beyer, G.P. ; Michelon, J. ; Maex, K.

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2005
  • Firstpage
    7
  • Lastpage
    17
  • Keywords
    copper; dielectric materials; diffusion barriers; electromigration; integrated circuit interconnections; integrated circuit reliability; semiconductor device reliability; Cu; IC reliability; back-end-of-line reliability; barrier reliability; copper; current-carrying metal reliability; dielectric reliability; electromigration; interconnect reliability; interconnect scaling; low-k TDDB; stress-induced-voiding; time-dependent dielectric breakdown; Copper; Delay; Dielectric constant; Dielectric materials; Electromigration; Integrated circuit interconnections; Materials reliability; Mesoporous materials; Plasma applications; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493054
  • Filename
    1493054
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1650237