1650237

The impact of scaling on interconnect reliability

Bruynseraede, C. ; Tökei, Zs ; Iacopi, F. ; Beyer, G.P. ; Michelon, J. ; Maex, K.

IMEC, Leuven, Belgium

2005

7

17

copper; dielectric materials; diffusion barriers; electromigration; integrated circuit interconnections; integrated circuit reliability; semiconductor device reliability; Cu; IC reliability; back-end-of-line reliability; barrier reliability; copper; current-carrying metal reliability; dielectric reliability; electromigration; interconnect reliability; interconnect scaling; low-k TDDB; stress-induced-voiding; time-dependent dielectric breakdown; Copper; Delay; Dielectric constant; Dielectric materials; Electromigration; Integrated circuit interconnections; Materials reliability; Mesoporous materials; Plasma applications; Transistors;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493054

1493054