Title :
A 32nm SoC platform technology with 2nd generation high-k/metal gate transistors optimized for ultra low power, high performance, and high density product applications
Author :
Jan, C.-H. ; Agostinelli, M. ; Buehler, M. ; Chen, Z.-P. ; Choi, S.-J. ; Curello, G. ; Deshpande, H. ; Gannavaram, S. ; Hafez, W. ; Jalan, U. ; Kang, M. ; Kolar, P. ; Komeyli, K. ; Landau, B. ; Lake, A. ; Lazo, N. ; Lee, S.-H. ; Leo, T. ; Lin, J. ; Linder
Author_Institution :
Logic Technol. Dev. (Ltd.), Intel Corp., Hillsboro, OR, USA
Abstract :
A leading edge 32 nm high-k/metal gate transistor technology has been optimized for SoC platform applications that span a wide range of power, performance, and feature space. This technology has been developed to be modular, offering mix-and-match transistors, interconnects, RF/analog passive elements, embedded memory, and noise mitigation options. The low gate leakage of the high-k gate dielectric enables the triple transistor architecture to support ultra low power, high performance, and high voltage tolerant I/O devices concurrently. Embedded memories include high density (0.148 um2) and low voltage (0.171 um2) SRAMs as well as secure OTP fuses. Analog/RF SoC features include high precision, high quality passives (resistors, capacitors and inductors) and deep-nwell noise isolation.
Keywords :
SRAM chips; capacitors; inductors; interconnections; mixed analogue-digital integrated circuits; nanotechnology; optimisation; passive networks; resistors; system-on-chip; transistors; I-O devices; RF-analog passive elements; SRAM; SoC platform technology; capacitors; deep-nwell noise isolation; embedded memories; embedded memory; high density product applications; high performance product applications; high quality passives; high-k-metal gate transistors; inductors; interconnects; mix-and-match transistors; noise mitigation options; resistors; secure OTP fuses; size 32 nm; ultralow power applications; Capacitors; Fuses; Gate leakage; High K dielectric materials; High-K gate dielectrics; Inductors; Low voltage; Radio frequency; Resistors; Space technology;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424258
