1650353

Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETs

Chan, C.T. ; Tang, C.J. ; Kuo, C.H. ; Ma, H.C. ; Tsai, C.W. ; Wang, Tahui ; Chi, M.H. ; Tahui Wang

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

2005

41

44

MOSFET; dielectric devices; electron traps; single electron transistors; tunnelling; HfSiON; MOSFET; channel current; charge emission time; high-k gate dielectric; single-electron de-trapping; single-electron emission; step-like evolution; thermally assisted tunneling; trap activation energy; trap density; trapped electron emission; Current measurement; Dielectric measurements; Electron emission; Electron traps; High K dielectric materials; High-K gate dielectrics; MOSFETs; Stress; Time measurement; Tunneling;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493059

1493059