• DocumentCode
    1650373
  • Title

    Optimal device structure for Pipe-shaped BiCS Flash memory for ultra high density storage device with excellent performance and reliability

  • Author

    Ishiduki, Megumi ; Fukuzumi, Yoshiaki ; Katsumata, Ryota ; Kito, Masaru ; Kido, Masaru ; Tanaka, Hiroyasu ; Komori, Yosuke ; Nagata, Yuzo ; Fujiwara, Tomoko ; Maeda, Takashi ; Mikajiri, Yoshimasa ; Oota, Shigeto ; Honda, Makoto ; Iwata, Yoshihisa ; Kirisa

  • Author_Institution
    Center for Semicond. R&D, Toshiba Corp., Kawasaki, Japan
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    An asymmetric source/drain profile for select gate and metal salicided control gate are successfully realized on Pipe-shaped Bit Cost Scalable (P-BiCS) Flash memory to achieve data storage device with excellent performance and reliability.
  • Keywords
    flash memories; reliability theory; asymmetric source/drain profile; data storage device; metal salicided control gate; optimal device structure; pipe-shaped BiCS flash memory; pipe-shaped bit cost scalable flash memory; ultra high density storage device; Character generation; FETs; Flash memory; Information systems; Leakage current; Manufacturing processes; Semiconductor device reliability; Shape control; Stereolithography; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424261
  • Filename
    5424261
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1650373