A stackable cross point Phase Change Memory

Author

Kau, DerChang ; Tang, Stephen ; Karpov, Ilya V. ; Dodge, Rick ; Klehn, Brett ; Kalb, Johannes A. ; Strand, Jonathan ; Diaz, Aleshandre ; Leung, Nelson ; Wu, Jack ; Lee, Sean ; Langtry, Tim ; Chang, Kuo-wei ; Papagianni, Christina ; Lee, Jinwook ; Hirst, J

Author_Institution

Technol. & Manuf. Group, Intel Corp., Santa Clara, CA, USA

fYear

2009

Firstpage

1

Lastpage

4

Abstract

A novel scalable and stackable nonvolatile memory technology suitable for building fast and dense memory devices is discussed. The memory cell is built by layering a storage element and a selector. The storage element is a Phase Change Memory (PCM) cell and the selector is an Ovonic Threshold Switch (OTS). The vertically integrated memory cell of one PCM and one OTS (PCMS) is embedded in a true cross point array. Arrays are stacked on top of CMOS circuits for decoding, sensing and logic functions. A RESET speed of 9 nsec and endurance of 10⁶ cycles are achieved. One volt of dynamic range delineating SET vs. RESET is also demonstrated.

Keywords

phase change memories; CMOS circuits; dense memory devices; integrated memory cell; ovonic threshold switch; selector; stackable cross point phase change memory cell; stackable nonvolatile memory technology; storage element; true cross point array; CMOS logic circuits; CMOS memory circuits; Decoding; Dynamic range; Logic arrays; Logic functions; Nonvolatile memory; Phase change materials; Phase change memory; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424263

Filename

5424263