1650526

Thermochernical understanding of dielectric breakdown in HfSiON with current acceleration

Yamaguchi, T. ; Hirano, I. ; Lijima, R. ; Sekine, K. ; Takayanagi, M. ; Eguchi, K. ; Mitani, Y. ; Fukushima, N.

Adv. LSI Technol. Lab., Yokohama, Japan

2005

67

74

charge injection; dielectric thin films; hafnium compounds; leakage currents; semiconductor device breakdown; semiconductor device reliability; HfSiON; current acceleration; dielectric breakdown; high temperature degradation mechanism; injected carriers; leakage current model; lifetime projection model; reliability analysis; thermochemical breakdown model; total hole fluence; Acceleration; Capacitors; Charge carrier processes; Degradation; Design for quality; Dielectric breakdown; Dielectric measurements; Electric breakdown; Plasma measurements; Plasma temperature;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493065

1493065