• DocumentCode
    1650568
  • Title

    Comparison of NMOS and PMOS stress for determining the source of NBTI TiN/HfSiON devices

  • Author

    Harris, H. Rusty ; Choi, Rino ; Lee, B.H. ; Young, C.D. ; Sim, J.H. ; Mathews, K. ; Zeitzoff, P. ; Majhi, P. ; Bersuker, G.

  • Author_Institution
    SEMATECH, Austin, TX, USA
  • fYear
    2005
  • Firstpage
    80
  • Lastpage
    83
  • Keywords
    MOSFET; dielectric thin films; electron traps; hafnium compounds; semiconductor device models; semiconductor device reliability; titanium compounds; FET reliability; NBTI; NMOS transistors; PMOS transistors; TiN-HfSiON; dangling bond passivation; deep electron traps; high-k gate stack structures; hydrogen hole-assisted dissociation; negative gate stress cycle dependence; positive gate de-trapping; reversible charge trapping; shallow electron traps; threshold voltage instability; threshold voltage shift; Annealing; Dielectric substrates; Electron traps; MOS devices; Niobium compounds; Pulse measurements; Stress measurement; Threshold voltage; Tin; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493067
  • Filename
    1493067
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1650568