• DocumentCode
    1650660
  • Title

    Study of factors limiting ESD diode performance in 90nm CMOS technologies and beyond

  • Author

    Chatty, K. ; Gauthier, R. ; Putnam, C. ; Muhammad, M. ; Woo, M. ; Li, J. ; Halbach, R. ; Seguin, C.

  • Author_Institution
    Semicond. Res. & Dev. Center, IBM Syst. & Technol. Group, Essex Junction, VT, USA
  • fYear
    2005
  • Firstpage
    98
  • Lastpage
    105
  • Keywords
    CMOS integrated circuits; electrostatic discharge; power semiconductor diodes; semiconductor device breakdown; semiconductor device reliability; 0.27 ohm; 1.66 V; 100 ns; 125 fF; 2 A; 300 micron; 5 A; 65 nm; 90 nm; ESD diode limiting factors; P+/N-well ESD protection diodes; TLP failure current; anode perimeter; bulk CMOS technologies; contacts; diode failure current; diode on-resistance; forward voltage drop; junction capacitance; metal lines; vias; Atherosclerosis; Breakdown voltage; CMOS technology; Capacitance; Clamps; Electrostatic discharge; MOSFET circuits; Protection; Research and development; Semiconductor diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493070
  • Filename
    1493070
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1650660