Title :
Physical insights on graphene nanoribbon mobility through atomistic simulations
Author :
Betti, A. ; Fiori, G. ; Iannaccone, G. ; Mao, Y.
Author_Institution :
Dipt. di Ing. dell´´Inf., Univ. di Pisa, Pisa, Italy
Abstract :
We present an investigation of the main mechanisms which limit mobility in GNR-FETs, by means of atomistic simulations based on the NEGF formalism. In particular, we focus on i) line edge roughness (LER), ii) single defects; iii) ionized impurities, iv) acoustic and optical phonons. Results show that the effect of ionized impurities is negligible, while phonons, LER and defects largely limits carrier mobility, especially for narrower GNRs.
Keywords :
carrier mobility; field effect transistors; graphene; nanostructured materials; GNR-FET; NEGF formalism; acoustic phonons; atomistic simulations; carrier mobility; graphene nanoribbon mobility; ionized impurity; line edge roughness; optical phonons; single defects; Acoustic scattering; Atom optics; Boundary conditions; Cancer; Computational modeling; Impurities; Optical computing; Optical scattering; Pathology; Phonons;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424276
