A computational evaluation of the designs of a novel nanoelectromechanical switch based on bilayer graphene nanoribbon

Author

Lam, Kai-Tak ; Liang, Gengchiau

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore

fYear

2009

Firstpage

1

Lastpage

4

Abstract

A novel nanoelectromechanical switch based on bilayer graphene nanoribbon (BGNR) is studied and introduced. By varying the interlayer distance via electrostatic means, the electronic properties of the BGNR is changed and is reflected in the current flowing through the device. Three floating gate designs based on the capacitive parallel plate actuator for the device are discussed for different applications and optimizing parameters such as gate capacitance and spring constant are used to tune the switching gate bias.

Keywords

graphene; nanoelectromechanical devices; switches; BGNR; bilayer graphene nanoribbon; capacitive parallel plate actuator; computational evaluation; electronic properties; electrostatic means; floating gate designs; interlayer distance; nanoelectromechanical switch; switching gate bias; Atomic layer deposition; Capacitance; Conducting materials; Design optimization; Electrostatics; Nanoelectromechanical systems; Semiconductivity; Semiconductor materials; Springs; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424277

Filename

5424277