1650817

Reliability investigations for manufacturable high density PRAM

Kim, Kinam ; Ahn, Su Jin

Adv. Technol. Dev., Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea

2005

157

162

SRAM chips; integrated circuit reliability; integrated circuit testing; phase change materials; 0.12 micron; 64 Mbit; PRAM reliability; chalcogenide memory material; data retention; degradation modes; disturbance immunity; endurance; manufacturable high density PRAM; phase-change memory; reprogrammable nonvolatile memory; Amorphous materials; Conducting materials; Crystallization; Electrodes; Manufacturing; Material storage; Phase change materials; Phase change random access memory; Temperature dependence; Writing;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493077

1493077