1650844

Reliability of 4MBIT MRAM

Akerman, Johan ; Brown, Philip ; Gajewski, Don ; Griswold, Mark ; Janesky, Jason ; Martin, Matthew ; Mekonnen, Hamere ; Nahas, Joseph J. ; Pietambaram, Srinivas ; Slaughter, J.M. ; Tehrani, Saied

Freescale Semicond., Chandler, AZ, USA

2005

163

167

SRAM chips; electric breakdown; electromigration; integrated circuit reliability; integrated circuit testing; magnetoresistive devices; thermal stability; tunnelling magnetoresistance; 10 year; 4 Mbit; MRAM arrays; MRAM reliability; MTJ MRAM bit cell; MTJ dielectric breakdown; data retention; electromigration; magnetoresistive random access memory; nonvolatile memory; programming current drift; resistance drift; thermal endurance; CMOS technology; Dielectric breakdown; Electrical resistance measurement; Magnetic fields; Magnetic flux; Magnetic tunneling; Random access memory; Stress measurement; Temperature; Voltage;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493078

1493078