1650935

The kinetics of degradation of data retention of post-cycled nrom non-volatile memory products

Janai, Meir ; Eitan, Boaz

Saifun Semicond. Ltd., Netanya, Israel

2005

175

180

EPROM; PROM; electron traps; flash memories; integrated circuit reliability; NROM reliability; NVM; SiN; code flash memory; data retention degradation kinetics; dispersive transport; junction edge hole accumulation; laterally migrating excess holes; nitride-based localized-trapping; nonvolatile memory; parallel EEPROM; post-cycled NROM; retention bake; serial flash memory; threshold voltage drift; trapped electrons; Charge carrier processes; Degradation; Dispersion; Electron traps; Kinetic theory; MOSFETs; Nonvolatile memory; Silicon compounds; Temperature distribution; Threshold voltage;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493080

1493080