DocumentCode
1650990
Title
Nanowire based electronics: Challenges and prospects
Author
Lu, Wei
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
fYear
2009
Firstpage
1
Lastpage
4
Abstract
This review provides a survey of recent progresses in nanowire (NW) electronics. Studies at the single-transistor level have shown that devices based on chemically synthesized nanowires can offer similar or better performance compared to their CMOS counterparts. The ultra-thin body, one-dimensional NW structure further assures that electrical integrity can be preserved even in aggressively scaled devices. Three different approaches have been developed to address the critical device integration issue.
Keywords
nanoelectronics; nanowires; chemically synthesized nanowires; critical device integration issue; electrical integrity; nanowire based electronics; one-dimensional NW structure; scaled devices; single-transistor level; Assembly; Chemicals; Computer science; Delay estimation; Electron mobility; MOSFET circuits; Nanoscale devices; Nanostructured materials; Scattering; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4244-5639-0
Electronic_ISBN
978-1-4244-5640-6
Type
conf
DOI
10.1109/IEDM.2009.5424283
Filename
5424283
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