• DocumentCode
    1650990
  • Title

    Nanowire based electronics: Challenges and prospects

  • Author

    Lu, Wei

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This review provides a survey of recent progresses in nanowire (NW) electronics. Studies at the single-transistor level have shown that devices based on chemically synthesized nanowires can offer similar or better performance compared to their CMOS counterparts. The ultra-thin body, one-dimensional NW structure further assures that electrical integrity can be preserved even in aggressively scaled devices. Three different approaches have been developed to address the critical device integration issue.
  • Keywords
    nanoelectronics; nanowires; chemically synthesized nanowires; critical device integration issue; electrical integrity; nanowire based electronics; one-dimensional NW structure; scaled devices; single-transistor level; Assembly; Chemicals; Computer science; Delay estimation; Electron mobility; MOSFET circuits; Nanoscale devices; Nanostructured materials; Scattering; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424283
  • Filename
    5424283