Title :
CMOS compatible Ge/Si core/shell nanowire gate-all-around pMOSFET integrated with HfO2/TaN gate stack
Author :
Peng, J.W. ; Singh, N. ; Lo, G.Q. ; Kwong, D.L. ; Lee, S.J.
Author_Institution :
Inst. of Microelectron., A*STAR, Singapore, Singapore
Abstract :
Ge/Si core/shell gate-all-round nanowire pMOSFET integrated with HfO2/TaN gate stack is demonstrated using fully CMOS compatible process. Devices with 100 nm gate length achieved high ION of ~946 ¿A/¿m at VG - VT = -0.7 V and VDS = -1 V and on/off ratio of 104 with decent subthreshold behavior. Significant improvement in hole mobility and ballistic efficiency is demonstrated as a result of core/shell channel architecture.
Keywords :
CMOS integrated circuits; Ge-Si alloys; MOSFET; CMOS compatible process; HfO2-TaN; ballistic efficiency; complementary metal-oxide-semiconductor; core channel architecture; gate stack; hole mobility; metal oxide semiconductor field effect transistors; nanowire gate; pMOSFET; shell channel architecture; size 100 nm; voltage -1 V; voltage 0.7 V; Dry etching; Fabrication; Hafnium oxide; MOSFET circuits; Oxidation; Plasma applications; Polymers; Rapid thermal processing; Resists; Surface resistance;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424284
