Title : 
Highly scalable nonvolatile TiOx/TaSiOy solid-electrolyte crossbar switch integrated in local interconnect for low power reconfigurable logic
         
        
            Author : 
Tada, M. ; Sakamoto, T. ; Tsuji, Y. ; Banno, N. ; Saito, Y. ; Yabe, Y. ; Ishida, S. ; Terai, M. ; Kotsuji, S. ; Iguchi, N. ; Aono, M. ; Hada, H. ; Kasai, N.
         
        
            Author_Institution : 
Device Platforms Res. Labs., NEC Corp., Sagamihara, Japan
         
        
        
        
        
            Abstract : 
A fully logic-compatible, nonvolatile crossbar switch using a novel dual-layer TiOx/TaSiOy solid-electrolyte, ¿NanoBridge¿, has been developed for the first time, which is scalable to 50 nm and beyond and keeps the extremely low ON-resistance of <100 ¿. A key breakthrough is the dual-layer solid-electrolyte, in which TiOx works as an oxygen absorber as well as a superior ionic conductor, thus improving the yield, ON/OFF resistance ratio (>106) and cycling endurance (>103). The highly scalable 4 à 4 crossbar switch composed of NanoBridge integrated in a local Cu interconnect of a standard CMOS is successfully configured without select transistors. The nonvolatile solid-electrolyte, crossbar switch is a promising switch element for low power and low cost reconfigurable logic.
         
        
            Keywords : 
CMOS integrated circuits; copper; integrated circuit interconnections; logic devices; low-power electronics; solid electrolytes; switches; CMOS; Cu interconnect; ON/OFF resistance ratio; TiO-TaSiO; cycling endurance; dual-layer solid-electrolyte; low power reconfigurable logic; nanobridge; nonvolatile crossbar switch; nonvolatile solid-electrolyte crossbar switch; oxygen absorber; size 50 nm; superior ionic conductor; switch element; Bridge circuits; Electrodes; Energy consumption; Nanoscale devices; Oxidation; Reconfigurable logic; Solids; Switches; Ultra large scale integration; Voltage;
         
        
        
        
            Conference_Titel : 
Electron Devices Meeting (IEDM), 2009 IEEE International
         
        
            Conference_Location : 
Baltimore, MD
         
        
            Print_ISBN : 
978-1-4244-5639-0
         
        
            Electronic_ISBN : 
978-1-4244-5640-6
         
        
        
            DOI : 
10.1109/IEDM.2009.5424287