DocumentCode :
1651053
Title :
Enhanced radical formation by electron attachment to highly-excited states of molecules in plasmas
Author :
Ding, W.X. ; McCorkle, D.L. ; Pinnaduwage, L.A.
Author_Institution :
Div. of Life Scis., Oak Ridge Nat. Lab., TN, USA
fYear :
1998
Firstpage :
270
Abstract :
Summary form only given. Large number densities of radicals are required in plasma assisted material processing where the formation of radicals is governed by conventional plasma chemical process. Operational pressure in plasma reactors has been greatly reduced to 10/sup -3/-10/sup -4/ torr to achieve the good control of particles transport toward the substrate. However low operational pressure results in the relatively low deposition rate. Therefore new plasma chemical reactions have to be pursued in order to efficiently produce radicals. We present a new experimental technique to obtain enhanced radical formation by electron attachment to highly excited state of molecules.
Keywords :
electron attachment; plasma applications; plasma collision processes; plasma density; 1E-3 to 1E-4 torr; electron attachment; enhanced radical formation; highly excited state; highly-excited states; molecules; operational pressure; particles transport; plasma assisted material processing; plasma chemical process; plasma reactors; plasmas; radical number density; Breakdown voltage; Dielectric breakdown; Electrons; Nuclear and plasma sciences; Plasma chemistry; Plasma confinement; Plasma density; Plasma materials processing; Plasma measurements; Plasma sources;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 1998. 25th Anniversary. IEEE Conference Record - Abstracts. 1998 IEEE International on
Conference_Location :
Raleigh, NC, USA
ISSN :
0730-9244
Print_ISBN :
0-7803-4792-7
Type :
conf
DOI :
10.1109/PLASMA.1998.677841
Filename :
677841
Link To Document :
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