Novel T-channel nanowire FET with built-in signal amplification for pH sensing

Author

Shin, Kyeong-Sik ; Lee, Kyunghoon ; Kang, Ji Yoon ; Chui, Chi On

Author_Institution

Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA

fYear

2009

Firstpage

1

Lastpage

4

Abstract

The low level of output signal in conventional silicon nanowire field-effect transistors (FETs) could limit their potential deployments as integrated chemical and biomedical sensors. We have proposed in this work a novel T-shape channel nanowire FET with a built-in signal amplification mechanism. Compared to the co-fabricated, conventional silicon nanowire FET sensors, we have experimentally extracted from the novel device a significant improvement of almost 50 times in pH detection sensitivity.

Keywords

MOSFET; chemical sensors; elemental semiconductors; nanofabrication; nanowires; pH measurement; semiconductor quantum wires; silicon; Si; T-channel nanowire FET; biomedical sensor; built-in signal amplification; integrated chemical sensor; pH sensing; silicon nanowire field-effect transistors; Biosensors; Chemical engineering; Chemical sensors; Chemical technology; FETs; Hydrogen; Nanoscale devices; Schottky barriers; Signal processing; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424288

Filename

5424288