1651071

Stress migration reliability of wide CU interconnects with gouging vias

Lim, Y.K. ; Arijit, R. ; Pey, K.L. ; Tan, C.M. ; Seet, C.S. ; Lee, T.J. ; Vigar, D.

Chartered Semicond. Manuf. Ltd., Singapore, Singapore

2005

203

208

diffusion barriers; finite element analysis; integrated circuit interconnections; semiconductor device reliability; stress effects; thermal stresses; voids (solid); 1000 hour; 150 to 200 C; 3D FEA; Cu; FEM; Si₃N₄; diffusion barrier layer coverage; gouging vias; high temperature stressing; process-induced weak points; silicon nitride cap/via interface; stress distribution; stress gradient; stress migration reliability; stress-induced voids; tensile stress; three dimensional finite element analysis; via chain structure; void nucleation; wide copper interconnects; Argon; Artificial intelligence; Copper; Fabrication; Integrated circuit interconnections; Lead; Pulp manufacturing; Samarium; Tensile stress; Very large scale integration;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493085

1493085