Title :
Heterogeneous integration of III-V on Si: Overcoming the lattice-mismatch barrier via the 1D route
Author :
Shin, Jae Cheol ; Mohseni, Parsian ; Tomasulo, Stephanie ; Montgomery, Kyle ; Lee, Minjoo ; Li, Xiuling
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
Abstract :
We demonstrate one-dimensional heteroepitaxy of InxGa1-xAs nanowires in the entire composition range on silicon substrates without dislocations. Doping and interfaces are characterized. Applications including improving the silicon solar cell efficiency will be presented.
Keywords :
doping; epitaxial growth; gallium arsenide; indium compounds; nanowires; solar cells; ternary semiconductors; 1D heteroepitaxy nanowires; InGaAs; Si; epitaxial growth; heterogeneous integration; lattice mismatch barrier; silicon solar cell efficiency; Arrays; Indium gallium arsenide; Nanowires; Photonic band gap; Photovoltaic cells; Silicon; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6