A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO2/Gd2O3(Gd) nano-crystal/SiO2 sensing membranes under super nernstian phenomenon for pH and urea detection

Author

Tseng-Fu Lua ; Wang, Jer-Chyi ; Lai, Chao-Sung ; Yang, Chai-Ming ; Wu, Min-Hsien ; Liu, Chuan-Pu ; Huang, Rong-Shie ; Fang, Yu-Ching

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan

fYear

2009

Firstpage

1

Lastpage

4

Abstract

An enhanced hydrogen and urea biosensor based on a novel flash-ion-sensitive field-effect transistor (FISFET) with HfO₂/Gd₂O₃(Gd) nano-crystal/SiO₂ sensing membrane is demonstrated experimentally. The super Nernstian phenomenon of hydrogen detection (~80 mV/pH) is achieved according to the charge trapping effect. The performance of reliability including long-term stability and endurance are systematic studied. For urea detection, the higher sensitivity is obtained (~20 mV/mM) in the concentration range from 1 to 8 mM.

Keywords

chemical sensors; field effect transistors; gadolinium compounds; hafnium compounds; nanostructured materials; pH measurement; silicon compounds; FISFET; HfO₂-Gd₂O₃-SiO₂; flash-ion-sensitive field-effect transistor; hydrogen detection; nanocrystal sensing membranes; pH detection; super Nernstian phenomenon; urea detection; Biomedical engineering; Biomembranes; Biosensors; CMOS technology; Capacitance-voltage characteristics; FETs; Hafnium oxide; Hydrogen; Materials science and technology; Nanobioscience;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424289

Filename

5424289