Title :
A novel flash-ion-sensitive field-effect transistor (FISFET) with HfO2/Gd2O3(Gd) nano-crystal/SiO2 sensing membranes under super nernstian phenomenon for pH and urea detection
Author :
Tseng-Fu Lua ; Wang, Jer-Chyi ; Lai, Chao-Sung ; Yang, Chai-Ming ; Wu, Min-Hsien ; Liu, Chuan-Pu ; Huang, Rong-Shie ; Fang, Yu-Ching
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Abstract :
An enhanced hydrogen and urea biosensor based on a novel flash-ion-sensitive field-effect transistor (FISFET) with HfO2/Gd2O3(Gd) nano-crystal/SiO2 sensing membrane is demonstrated experimentally. The super Nernstian phenomenon of hydrogen detection (~80 mV/pH) is achieved according to the charge trapping effect. The performance of reliability including long-term stability and endurance are systematic studied. For urea detection, the higher sensitivity is obtained (~20 mV/mM) in the concentration range from 1 to 8 mM.
Keywords :
chemical sensors; field effect transistors; gadolinium compounds; hafnium compounds; nanostructured materials; pH measurement; silicon compounds; FISFET; HfO2-Gd2O3-SiO2; flash-ion-sensitive field-effect transistor; hydrogen detection; nanocrystal sensing membranes; pH detection; super Nernstian phenomenon; urea detection; Biomedical engineering; Biomembranes; Biosensors; CMOS technology; Capacitance-voltage characteristics; FETs; Hafnium oxide; Hydrogen; Materials science and technology; Nanobioscience;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424289
