Title :
Reliability assessment of discrete-trap memories for NOR applications
Author :
Compagnoni, C. Monzio ; Ielmini, D. ; Spinelli, A.S. ; Lacaita, A.L. ; Sotgiu, R.
Author_Institution :
Dipt. di Elettronica e Informazione, Univ. di Milano, Italy
Keywords :
NOR circuits; charge exchange; hot carriers; nanostructured materials; semiconductor device reliability; semiconductor storage; NOR architecture; bake-accelerated retention tests; channel hot-electron injection; charge localization; charge migration; charge transfer; discrete-trap memories; drain disturb; drain turn; junction edges; nanocrystal memory cells; nitride memory cells; reading drain voltages; reliability; state-of-art flash cells; threshold voltage loss; Channel hot electron injection; Degradation; MOSFET circuits; Material storage; Nanocrystals; Reliability theory; Sociotechnical systems; Testing; Threshold voltage; Tunneling;
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
DOI :
10.1109/RELPHY.2005.1493091
