Title :
Can carbon nanotube transistors be scaled without performance degradation?
Author :
Franklin, Aaron D. ; Tulevski, George ; Hannon, James B. ; Chen, Zhihong
Author_Institution :
T.J. Watson Res. Center, IBM, Yorktown Heights, NY, USA
Abstract :
The effects of channel length scaling on carbon nanotube field-effect transistor (CNTFET) performance was investigated by varying device lengths on the same nanotube. Results show that scaling improves performance with substantial increases in on-current, resistances closer to the quantum limit than have ever been reported, and the shortest (~30 nm) well-behaving CNTFETs to date.
Keywords :
carbon nanotubes; field effect transistors; nanotube devices; CNTFET; carbon nanotube field-effect transistor performance; carbon nanotube transistors; channel length scaling; performance degradation; Atomic force microscopy; Atomic layer deposition; CNTFETs; Carbon nanotubes; Degradation; Dielectrics; Geometry; Nanoscale devices; Scanning electron microscopy; Semiconductivity;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424296
