• DocumentCode
    1651319
  • Title

    Impact of mechanical stress on interface trap generation in flash eeproms

  • Author

    Toda, Akio ; Fujieda, Shinji ; Kanamori, Kohji ; Suzuki, Junichi ; Kuroyanagi, Kammasa ; Kodama, Noriaki ; Den, Yasuhide ; Nishizaka, Teiichiro

  • Author_Institution
    Syst. Devices Res. Labs., NEC Corp., Kanagawa, Japan
  • fYear
    2005
  • Firstpage
    250
  • Lastpage
    256
  • Keywords
    flash memories; integrated circuit measurement; integrated circuit reliability; interface states; internal stresses; stress measurement; transmission electron microscopy; 0.15 micron; EEPROM endurance; Flash EEPROM cell; NOR cells; SiN-Si; SiO2-Si; TEM; channel stress; charge pumping method; compressive mechanical stress; convergent-beam electron diffraction; data retention degradation; interface trap density; interface trap generation; trap generation; trap recovery; tunnel-oxide/substrate interface; Character generation; Density measurement; Diffraction; EPROM; Electron traps; Lattices; Mechanical variables measurement; Silicon compounds; Strain measurement; Stress measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493093
  • Filename
    1493093
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1651319