1651319

Impact of mechanical stress on interface trap generation in flash eeproms

Toda, Akio ; Fujieda, Shinji ; Kanamori, Kohji ; Suzuki, Junichi ; Kuroyanagi, Kammasa ; Kodama, Noriaki ; Den, Yasuhide ; Nishizaka, Teiichiro

Syst. Devices Res. Labs., NEC Corp., Kanagawa, Japan

2005

250

256

flash memories; integrated circuit measurement; integrated circuit reliability; interface states; internal stresses; stress measurement; transmission electron microscopy; 0.15 micron; EEPROM endurance; Flash EEPROM cell; NOR cells; SiN-Si; SiO₂-Si; TEM; channel stress; charge pumping method; compressive mechanical stress; convergent-beam electron diffraction; data retention degradation; interface trap density; interface trap generation; trap generation; trap recovery; tunnel-oxide/substrate interface; Character generation; Density measurement; Diffraction; EPROM; Electron traps; Lattices; Mechanical variables measurement; Silicon compounds; Strain measurement; Stress measurement;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493093

1493093