1651342

The effect of mechanical stress from stopping nitride to the reliability of tunnel oxide and data retention characteristics of NAND FLASH memory

Om, Jaechul ; Choi, Eunseok ; Kim, Sejun ; Heegee Lee ; Kim, Yongwook ; Chang, Heehyun ; Park, Suncki ; Bae, Gihyun

Flash Div., HyNix Semicond. Inc., Kyoungki-do, South Korea

2005

257

259

flash memories; integrated circuit reliability; interface states; internal stresses; leakage currents; technology CAD (electronics); NAND FLASH memory; SILC; TCAD simulation; VFB shift; charge trapping; constant current stress; data retention; etch stopper; interface defects; interface states; stopping nitride mechanical stress; stress-induced-leakage-current; tunnel oxidation; tunnel oxide reliability; Annealing; Channel bank filters; Degradation; Etching; Hydrogen; Interface states; Leakage current; Moisture; Plasma applications; Stress;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493094

1493094