1651357

Low frequency noise degradation in ultra-thin oxide (15A/spl deg) analog n-MOSFETs resulting from valence-band tunneling

Wu, J.W. ; You, J.W. ; Ma, H.C. ; Cheng, C.C. ; Hsu, C.F. ; Huang, G.W. ; Chang, C.S. ; Wang, Tahui

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

2005

260

264

Fermi level; MOSFET; electron traps; electron-hole recombination; flicker noise; interface states; semiconductor device noise; tunnelling; valence bands; 15 Å; analog n-MOSFET; electron detrapping times; electron trapping times; electron-hole recombination; electron/hole quasi Fermi-level splitting; interface traps; low frequency flicker noise; low frequency noise degradation; measured trap time gate voltage dependence; random telegraph signal; trap emission times; ultra-thin oxide; valence-band electron tunneling; 1f noise; Charge carrier processes; Degradation; Electron traps; Frequency domain analysis; Low-frequency noise; MOSFET circuits; Noise measurement; Telegraphy; Tunneling;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493095

1493095