1651380

Characterization and modeling of low frequency noise degradation due to NMOS hot electron stress

Dey, S. ; Agostinelli, M.

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

2005

265

268

1/f noise; MOSFET; flicker noise; hot carriers; interface states; semiconductor device noise; 1/f noise; NMOS hot electron stress; bias effects; drain current degradation; electrical stress effects; flicker noise; hot carrier effects; low frequency noise degradation; thick gate oxide NMOS transistors; ultra-thin gate oxide NMOS transistors; 1f noise; Degradation; Electrons; Integrated circuit noise; Low-frequency noise; MOS devices; Noise measurement; Radio frequency; Stress; Thickness measurement;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493096

1493096