Improvement of Gain Recovery in QD-VCSOA at 1-Tb/s Cross Gain Modulation Using an Additional Light Beam

Author

Sahraee, Elham ; Zarifkar, A. ; Sanaee, Maryam

Author_Institution

Dept. of Commun. & Electron., Shiraz Univ., Shiraz, Iran

Volume

50

Issue

10

fYear

2014

fDate

Oct. 2014

Firstpage

795

Lastpage

801

Abstract

The acceleration of gain recovery in quantum dot vertical cavity semiconductor optical amplifiers (QD-VCSOA) is investigated. The 1-Tb/s pattern effect free cross gain modulation in QD-VCSOA can be achieved by using an additional light beam. We can overcome the limitation of the slow transition of carriers from the wetting layer to the excited state by applying a light beam which increases the carrier density in the excited state and thus strongly improves the gain recovery time.

Keywords

carrier density; excited states; laser beams; optical modulation; quantum dot lasers; semiconductor optical amplifiers; surface emitting lasers; QD-VCSOA; carrier density; carrier transition; excited state; gain recovery acceleration; gain recovery time; light beam; pattern effect free cross gain modulation; quantum dot vertical cavity semiconductor optical amplifiers; wetting layer; Bit rate; Cavity resonators; Current density; Equations; Nonhomogeneous media; Probes; Quantum dots; Gain recovery acceleration; quantum dot (QD); vertical-cavity semiconductor optical amplifier (VCSOA);

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2014.2345658

Filename

6873215