1651410

Anomalous NMOSFET hot carrier degradation due to trapped positive charge in a DGO CMOS process

Brisbin, Douglas ; Mirgorodski, Yuri ; Chaparala, Prasad

Nat. Semicond. Corp., Santa Clara, CA, USA

2005

269

274

MOSFET; charge injection; hot carriers; impact ionisation; interface states; passivation; BEOL; DGO CMOS process; DGO NMOSFET; H₂; Si-SiO₂; annealing; anomalous hot carrier degradation; back-end-of-line processing steps; dangling bond passivation; device channel secondary impact ionization site; interface states; interlayer dielectric film deposition; trapped positive charge injection; Acceleration; CMOS process; Degradation; Dielectric devices; Etching; Hot carriers; Hydrogen; MOSFET circuits; Stress; Voltage;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493097

1493097