• DocumentCode
    1651410
  • Title

    Anomalous NMOSFET hot carrier degradation due to trapped positive charge in a DGO CMOS process

  • Author

    Brisbin, Douglas ; Mirgorodski, Yuri ; Chaparala, Prasad

  • Author_Institution
    Nat. Semicond. Corp., Santa Clara, CA, USA
  • fYear
    2005
  • Firstpage
    269
  • Lastpage
    274
  • Keywords
    MOSFET; charge injection; hot carriers; impact ionisation; interface states; passivation; BEOL; DGO CMOS process; DGO NMOSFET; H2; Si-SiO2; annealing; anomalous hot carrier degradation; back-end-of-line processing steps; dangling bond passivation; device channel secondary impact ionization site; interface states; interlayer dielectric film deposition; trapped positive charge injection; Acceleration; CMOS process; Degradation; Dielectric devices; Etching; Hot carriers; Hydrogen; MOSFET circuits; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493097
  • Filename
    1493097
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1651410