1651421

Hot carrier degradation on n-channel HfSiON MOSFETs: effects on the device performance and lifetime

Cimino, S. ; Pantisano, L. ; Aoulaiche, M. ; Degraeve, Robin ; Kwak, D.H. ; Crupi, Felice ; Groeseneken, G. ; Paccagnella, A.

Dipt. di Ingegneria dell´´Informazione, Universita degli Studi di Padova, Italy

2005

275

279

MOSFET; dielectric thin films; hafnium compounds; hot carriers; interface states; semiconductor device breakdown; semiconductor device reliability; silicon compounds; Fowler-Nordheim stress; HfSiON; SiON; bulk defect generation; equivalent oxide thickness; gate stack lifetime reduction; hot carrier degradation; hot carrier reliability; hot carrier stress; interface state generation; maximum electron injection; maximum substrate current; n-channel MOSFET; polysilicon gate MOSFET; time dependant dielectric breakdown; CMOS process; Degradation; Dielectric substrates; Dielectrics and electrical insulation; Hafnium; Hot carriers; MOSFETs; Stress; Substrate hot electron injection; Voltage;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493098

1493098