Title :
Investigation on the thermal distribution of nmosfets under different operation modes by scanning thermal microscopy
Author :
Hendarto, E. ; Altes, A. ; Heiderhoff, R. ; Phang, J.C.H. ; Balk, L.J.
Author_Institution :
Centre for Integrated Circuit Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore
Keywords :
MOSFET; temperature distribution; temperature measurement; thermal analysis; 2.0 micron; 3.0 micron; SThM thermal analysis; Wollaston resistive probe; dynamic temperature measurement; far saturation operation; gate channel 2D thermal distribution; linear operation; maximum thermal wave amplitude region; nMOSFET; near breakdown operation; near saturation operation; operation mode biasing; pinch-off; scanning thermal microscopy; thermal distribution measurement; thermal wave propagation; ultra compliant polyimide thermal probe; Electric breakdown; Electrons; Failure analysis; MOSFET circuits; Microscopy; Probes; Reliability engineering; Thermal degradation; Thermal resistance; Threshold voltage;
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
DOI :
10.1109/RELPHY.2005.1493101
