DocumentCode
1651518
Title
Investigation on the thermal distribution of nmosfets under different operation modes by scanning thermal microscopy
Author
Hendarto, E. ; Altes, A. ; Heiderhoff, R. ; Phang, J.C.H. ; Balk, L.J.
Author_Institution
Centre for Integrated Circuit Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore
fYear
2005
Firstpage
294
Lastpage
299
Keywords
MOSFET; temperature distribution; temperature measurement; thermal analysis; 2.0 micron; 3.0 micron; SThM thermal analysis; Wollaston resistive probe; dynamic temperature measurement; far saturation operation; gate channel 2D thermal distribution; linear operation; maximum thermal wave amplitude region; nMOSFET; near breakdown operation; near saturation operation; operation mode biasing; pinch-off; scanning thermal microscopy; thermal distribution measurement; thermal wave propagation; ultra compliant polyimide thermal probe; Electric breakdown; Electrons; Failure analysis; MOSFET circuits; Microscopy; Probes; Reliability engineering; Thermal degradation; Thermal resistance; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN
0-7803-8803-8
Type
conf
DOI
10.1109/RELPHY.2005.1493101
Filename
1493101
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