A novel ring-oscillator with a very small process and temperature variation

Author

Routama, Jarkko ; Koli, Kimmo ; Halonen, Kari

Author_Institution

Electron. Circuit Design Lab., Helsinki Univ. of Technol., Espoo, Finland

Volume

1

fYear

1998

Firstpage

181

Abstract

This paper describes a new ring-oscillator circuit, the conversion gain of which has only a 92% variation with all process variations over the temperature range of 0° to 100°C. The operating range of the oscillator is 180 to 380 MHz. The circuit uses a 3-stage ring-oscillator for low speed conditions and a 4-stage oscillator for high speed conditions. The division between low and fast conditions is based on the transconductance of the MOS-transistors. The oscillator has also a process and temperature dependent control current. The circuit has been designed with a standard 0.5 μm CMOS-process

Keywords

CMOS integrated circuits; VHF oscillators; circuit tuning; voltage-controlled oscillators; 0 to 100 C; 0.5 micron; 180 to 380 MHz; 3-stage configuration; 4-stage configuration; conversion gain; high speed conditions; low speed conditions; process dependent control current; process variation; ring oscillator; standard CMOS process; temperature dependent control current; temperature variation; transconductance; Circuit optimization; Circuit topology; Phase locked loops; Resistors; Ring oscillators; Temperature control; Temperature dependence; Temperature distribution; Transconductance; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-4455-3

Type

conf

DOI

10.1109/ISCAS.1998.704240

Filename

704240