• DocumentCode
    1651613
  • Title

    Process-induced trapping of charge in PECVD dielectrics for RF MEMS capacitive switches

  • Author

    Webster, J.R. ; Dyck, C.W. ; Nordquist, C.D. ; Felix, J.A. ; Shaneyfelt, M.R. ; Schwank, J.R. ; Banks, J.C.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • fYear
    2005
  • Firstpage
    330
  • Lastpage
    336
  • Keywords
    MIS devices; dielectric thin films; electron traps; hole traps; internal stresses; microswitches; plasma CVD; reliability; 250 to 350 degC; MEMS reliability; MIS devices; PECVD dielectrics; RF MEMS capacitive switches; SiN:H; SiO2; SiON; capacitance-voltage measurements; dielectric charging; dielectric incorporated charge; electrical stresses; oxynitride films; plasma damage; plasma-induced stresses; post-deposition stresses; process-induced charge trapping; Dielectric devices; Dielectric losses; Dielectric thin films; Micromechanical devices; Plasma chemistry; Plasma temperature; Radiofrequency microelectromechanical systems; Stress; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493107
  • Filename
    1493107
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1651613