Title :
Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics for optimization of advanced devices
Author :
Pelaz, L. ; Marques, L. ; Aboy, M. ; Lopez, P. ; Santos, I. ; Duffy, R.
Author_Institution :
Univ. of Valladolid, Valladolid, Spain
Abstract :
Combined Molecular Dynamics and Kinetic Monte Carlo simulations are used in hierarchical models to gain physical understanding for process optimization in advanced devices. Thermal budget for the removal of defects in advanced millisecond anneals is evaluated. Alternatives to overcome the imperfect regrowth of narrow Si structures are proposed. The compromise between implant and anneal parameters for doping of FinFETs are presented, considering lateral diffusion and activation.
Keywords :
MOSFET; Monte Carlo methods; annealing; crystal defects; doping; molecular dynamics method; FinFET; atomistic process modeling; defect removal; hierarchical models; kinetic Monte Carlo; lateral activation; lateral diffusion; millisecond anneals; molecular dynamics; thermal budget; Annealing; Computational modeling; Computer simulation; Doping; Fabrication; Implants; Kinetic theory; Monte Carlo methods; Predictive models; Semiconductor process modeling;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424309
