• DocumentCode
    1651736
  • Title

    Measurement and statistical analysis of single trap current-voltage characteristics in ultrathin SiON

  • Author

    Degraeve, R. ; Govoreanu, B. ; Kaczer, B. ; Van Houdt, J. ; Groeseneken, G.

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2005
  • Firstpage
    360
  • Lastpage
    365
  • Keywords
    dielectric thin films; electron traps; hole traps; leakage currents; silicon compounds; statistical analysis; SILC generation rate; SiON; dielectric breakdown; fixed voltage conductivity; gate voltage conduction threshold; progressive wearout effects; single trap current-voltage characteristics; single-trap leakage paths switching behavior; statistical analysis; stress-induced leakage current; trap generation process voltage acceleration; trap generation rate; tunnel current; ultrathin gate dielectrics; Conductivity; Current measurement; Current-voltage characteristics; Degradation; Dielectrics; Leakage current; Presence network agents; Statistical analysis; Stress measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493113
  • Filename
    1493113
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1651736