1651746

V_oxE_ox-driven breakdown of ultra-thin SiON gate dielectric in p+gate-pMOSFET under low stress voltage of inversion mode

Tsujikawa, Shimpei ; Shiga, Katsuya ; Umeda, Hiroshi ; Akamatsu, Yasuhiko ; Yugami, Jiro ; Ohno, Yoshikazu ; Yoneda, Masahiro

Process Dev. Dept., Renesas Technol. Corp., Hyogo, Japan

2005

366

371

MOSFET; dielectric thin films; semiconductor device breakdown; semiconductor device reliability; silicon compounds; tunnelling; NBTI; SiON; breakdown mechanism; direct hole tunneling; gate doping concentration; interfacial hydrogen release; inversion mode low stress voltage; low-voltage CMOS reliability; oxide field; oxide voltage; p+gate-pMOSFET; ultra-thin gate dielectric breakdown; Breakdown voltage; Dielectric breakdown; Doping; Electric breakdown; Electrons; Low voltage; MOS capacitors; Niobium compounds; Stress; Titanium compounds;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493114

1493114