Title :
Novel compound semiconductor devices based on III-V nitrides
Author :
Pearton, S.J. ; Abernathy, C.R. ; Ren, F. ; Shul, R.J. ; Kilcoyne, S.P. ; Haggerott-Crawford, M. ; Zolper, J.C. ; Wilson, R.G. ; Schwartz, R. ; Zavada, J.M.
Author_Institution :
Florida Univ., Gainesville, FL, USA
Abstract :
New developments in dry and wet etching, ohmic contacts and epitaxial growth of III-V nitrides are reported. These make possible devices such as microdisk laser structures and GaAs/AlGaAs heterojunction bipolar transistors with improved InN ohmic contacts
Keywords :
III-V semiconductors; etching; molecular beam epitaxial growth; ohmic contacts; semiconductor devices; III-V nitrides; compound semiconductor devices; dry etching; epitaxial growth; heterojunction bipolar transistors; microdisk laser structures; ohmic contacts; wet etching; Annealing; Conductivity; Doping; Dry etching; Gallium nitride; III-V semiconductor materials; Ion implantation; Light emitting diodes; Particle beam optics; Plasma chemistry;
Conference_Titel :
Devices, Circuits and Systems, 1995., Proceedings of the 1995 First IEEE International Caracas Conference on
Conference_Location :
Caracas
Print_ISBN :
0-7803-2672-5
DOI :
10.1109/ICCDCS.1995.499117
