DocumentCode
1651747
Title
Novel compound semiconductor devices based on III-V nitrides
Author
Pearton, S.J. ; Abernathy, C.R. ; Ren, F. ; Shul, R.J. ; Kilcoyne, S.P. ; Haggerott-Crawford, M. ; Zolper, J.C. ; Wilson, R.G. ; Schwartz, R. ; Zavada, J.M.
Author_Institution
Florida Univ., Gainesville, FL, USA
fYear
1995
Firstpage
52
Lastpage
61
Abstract
New developments in dry and wet etching, ohmic contacts and epitaxial growth of III-V nitrides are reported. These make possible devices such as microdisk laser structures and GaAs/AlGaAs heterojunction bipolar transistors with improved InN ohmic contacts
Keywords
III-V semiconductors; etching; molecular beam epitaxial growth; ohmic contacts; semiconductor devices; III-V nitrides; compound semiconductor devices; dry etching; epitaxial growth; heterojunction bipolar transistors; microdisk laser structures; ohmic contacts; wet etching; Annealing; Conductivity; Doping; Dry etching; Gallium nitride; III-V semiconductor materials; Ion implantation; Light emitting diodes; Particle beam optics; Plasma chemistry;
fLanguage
English
Publisher
ieee
Conference_Titel
Devices, Circuits and Systems, 1995., Proceedings of the 1995 First IEEE International Caracas Conference on
Conference_Location
Caracas
Print_ISBN
0-7803-2672-5
Type
conf
DOI
10.1109/ICCDCS.1995.499117
Filename
499117
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